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DB3 /DB4 / DC34
TRIGGER DIODES
FEATURES VBO : 32V / 34V / 40V VERSIONS LOW BREAKOVER CURRENT
DESCRIPTION High reliability glass passivation insuring parameter stability and protection against junction contamination.
DO 35 (Glass)
ABSOLUTE RATINGS (limiting values) Symbol P Parameter Power dissipation on printed circuit (L = 10 mm) Repetitive peak on-state current Ta = 65 C tp = 20 s F= 100 Hz Value 150 Unit mW
ITRM
2
A C C
Tstg Tj
Storage and operating junction temperature range
- 40 to + 125 - 40 to + 125
THERMAL RESISTANCES Symbol Rth (j-a) Rth (j-l) Junction to ambient Junction-leads Parameter Value 400 150 Unit C/W C/W
April 1995
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DB3 / DB4 / DC34
ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol Parameter Test Conditions DB3 VBO Breakover voltage * C = 22nF ** see diagram 1 MIN TYP MAX [I+VBOI-I-VBOI] IV I VO IBO tr IB Breakover voltage symmetry Dynamic breakover voltage * Output voltage * Breakover current * Rise time * Leakage current * C = 22nF ** see diagram 1 I = [IBO to IF=10mA] see diagram 1 see diagram 2 C = 22nF ** see diagram 3 VB = 0.5 VBO max see diagram 1 MAX MIN MIN MAX TYP MAX 100 28 32 36 Value DC34 30 34 38 3 5 5 50 1.5 10 100 DB4 35 40 45 V V V A s A V Unit
* Electrical characteristic applicable in both forward and reverse directions. ** Connected in parallel with the devices.
DIAGRAM 1 : Current-voltage characteristics
DIAGRAM 2 : Test circuit for output voltage
10 k
+ IF 10mA
500 k
D.U.T VO R = 20
220 V 50 Hz 0.1 F
-V
IBO IB 0,5 VBO V
+V
DIAGRAM 3 : Test circuit see diagram 2. Adjust R for lp=0.5A
lp
VBO
90 %
- IF
10 % tr
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DB3 / DB4 / DC34
Fig.1 : Power dissipation versus ambient temperature (maximum values) Fig.2 : Relative variation of VBO versus junction temperature (typical values)
P (mW)
160 140 120 100 80 60 40 20 0
0
1.02 1.04 1.08
VBO[Tj] o VBO[Tj=25 C]
1.06
Tamb ( C)
o
o
Tj( C) 1.00 25 50 75 100 125
o
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.3 : Peak pulse current versus pulse duration (maximum values)
I TRM (A)
2 1
F = 100 Hz
Tj initial = 25 C
o
0.1
tp ( s)
0.01 10
100
1000
10000
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DB3 / DB4 / DC34
PACKAGE MECHANICAL DATA (in millimeters) DO 35 Glass
B note 1 E
A
B E note 1
/ OC
/ OD
note 2
OD /
REF.
DIMENSIONS Millimeters Min. Max.
4.500
NOTES
Inches Min.
0.120 0.500
Max.
0.117
A B C D E
3.050 12.7 1.530 0.458
1 - The lead diameter D is not controlled over zone E 2 - The minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59"(15 mm)
2.000 0.558 1.27
0.060 0.018
0.079 0.022 0.050
Cooling method by convection and conduction Marking : type number Weight : 0.15 g
Polarity : N A Stud torque : N A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - All rights reserved. Purchase of I C Components by SGS-THOMSON Microelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in an I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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